IPD068N10N3GATMA1
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IPD068N10N3GATMA1

Infineon Technologies

Product No:

IPD068N10N3GATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO252-3

Datasheet:

-

Description:

MOSFET N-CH 100V 90A TO252-3

Quantity:

Delivery:

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Payment:

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In Stock : 6146

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.325047

    $1.325047

  • 10

    $1.192543

    $11.92543

  • 50

    $1.060038

    $53.0019

  • 100

    $0.927533

    $92.7533

  • 500

    $0.901032

    $450.516

  • 1000

    $0.883365

    $883.365

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 4910 pF @ 50 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 68 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 6.8mOhm @ 90A, 10V
Product Status Active
Vgs(th) (Max) @ Id 3.5V @ 90µA
Supplier Device Package PG-TO252-3
Drain to Source Voltage (Vdss) 100 V
Power Dissipation (Max) 150W (Tc)
Series OptiMOS™
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 90A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Package Tape & Reel (TR)
Base Product Number IPD068