Infineon Technologies
Product No:
IPD096N08N3GATMA1
Manufacturer:
Package:
PG-TO252-3
Datasheet:
-
Description:
MOSFET N-CH 80V 73A TO252-3
Quantity:
Delivery:
Payment:
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$0.779625
$0.779625
10
$0.701663
$7.01663
50
$0.6237
$31.185
100
$0.545738
$54.5738
500
$0.530145
$265.0725
1000
$0.51975
$519.75
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Operating Temperature | -55°C ~ 175°C (TJ) |
FET Feature | - |
Input Capacitance (Ciss) (Max) @ Vds | 2410 pF @ 40 V |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V |
Mounting Type | Surface Mount |
Rds On (Max) @ Id, Vgs | 9.6mOhm @ 46A, 10V |
Product Status | Active |
Vgs(th) (Max) @ Id | 3.5V @ 46µA |
Supplier Device Package | PG-TO252-3 |
Drain to Source Voltage (Vdss) | 80 V |
Power Dissipation (Max) | 100W (Tc) |
Series | OptiMOS™ |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Technology | MOSFET (Metal Oxide) |
Current - Continuous Drain (Id) @ 25°C | 73A (Tc) |
Mfr | Infineon Technologies |
Vgs (Max) | ±20V |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
Package | Tape & Reel (TR) |
Base Product Number | IPD096 |