IPD11DP10NMATMA1
detaildesc

IPD11DP10NMATMA1

Infineon Technologies

Product No:

IPD11DP10NMATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO252-3

Datasheet:

-

Description:

TRENCH >=100V PG-TO252-3

Quantity:

Delivery:

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Payment:

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In Stock : 2500

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.799239

    $0.799239

  • 10

    $0.719315

    $7.19315

  • 50

    $0.639391

    $31.96955

  • 100

    $0.559467

    $55.9467

  • 500

    $0.543483

    $271.7415

  • 1000

    $0.532826

    $532.826

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 3200 pF @ 50 V
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 74 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 111mOhm @ 18A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 1.7mA
Supplier Device Package PG-TO252-3
Drain to Source Voltage (Vdss) 100 V
Power Dissipation (Max) 3W (Ta), 125W (Tc)
Series OptiMOS™
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 3.4A (Ta), 22A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)
Base Product Number IPD11D