IPD130N10NF2SATMA1
Infineon Technologies
Product No:
IPD130N10NF2SATMA1
Manufacturer:
Package:
PG-TO252-3
Datasheet:
-
Description:
MOSFET
Quantity:
Delivery:
Payment:
In Stock : 1313
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$0.710955
$0.710955
10
$0.63986
$6.3986
50
$0.568764
$28.4382
100
$0.497669
$49.7669
500
$0.483449
$241.7245
1000
$0.47397
$473.97
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Product Information
Parameter Info
User Guide
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 1300 pF @ 50 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 28 nC @ 10 V |
| Mounting Type | Surface Mount |
| Rds On (Max) @ Id, Vgs | 13mOhm @ 30A, 10V |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 3.8V @ 30µA |
| Supplier Device Package | PG-TO252-3 |
| Drain to Source Voltage (Vdss) | 100 V |
| Power Dissipation (Max) | 3W (Ta), 71W (Tc) |
| Series | StrongIRFET™ 2 |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta), 52A (Tc) |
| Mfr | Infineon Technologies |
| Vgs (Max) | ±20V |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Package | Tube |
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