IPD135N08N3GATMA1
detaildesc

IPD135N08N3GATMA1

Infineon Technologies

Product No:

IPD135N08N3GATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO252-3

Datasheet:

-

Description:

MOSFET N-CH 80V 45A TO252-3

Quantity:

Delivery:

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In Stock : 7484

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.649373

    $0.649373

  • 10

    $0.584435

    $5.84435

  • 50

    $0.519498

    $25.9749

  • 100

    $0.454561

    $45.4561

  • 500

    $0.441573

    $220.7865

  • 1000

    $0.432915

    $432.915

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1730 pF @ 40 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 25 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 13.5mOhm @ 45A, 10V
Product Status Active
Vgs(th) (Max) @ Id 3.5V @ 33µA
Supplier Device Package PG-TO252-3
Drain to Source Voltage (Vdss) 80 V
Power Dissipation (Max) 79W (Tc)
Series OptiMOS™
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 45A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Package Tape & Reel (TR)
Base Product Number IPD135