IPD18DP10LMATMA1
detaildesc

IPD18DP10LMATMA1

Infineon Technologies

Product No:

IPD18DP10LMATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO252-3

Datasheet:

-

Description:

TRENCH >=100V PG-TO252-3

Quantity:

Delivery:

1.webp 4.webp 5.webp 2.webp 3.webp

Payment:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

In Stock : 1805

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.79002

    $0.79002

  • 10

    $0.711018

    $7.11018

  • 50

    $0.632016

    $31.6008

  • 100

    $0.553014

    $55.3014

  • 500

    $0.537214

    $268.607

  • 1000

    $0.52668

    $526.68

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 2100 pF @ 50 V
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 42 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 178mOhm @ 13A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2V @ 1.04mA
Supplier Device Package PG-TO252-3
Drain to Source Voltage (Vdss) 100 V
Power Dissipation (Max) 3W (Ta), 83W (Tc)
Series OptiMOS™
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 2.5A (Ta), 13.9A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number IPD18D