IPD220N06L3GATMA1
detaildesc

IPD220N06L3GATMA1

Infineon Technologies

Product No:

IPD220N06L3GATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO252-3-311

Datasheet:

-

Description:

MOSFET N-CH 60V 30A TO252-3

Quantity:

Delivery:

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Payment:

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In Stock : 11957

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.44016

    $0.44016

  • 10

    $0.38514

    $3.8514

  • 50

    $0.33012

    $16.506

  • 100

    $0.30261

    $30.261

  • 500

    $0.288855

    $144.4275

  • 1000

    $0.2751

    $275.1

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1600 pF @ 30 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 10 nC @ 4.5 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 22mOhm @ 30A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.2V @ 11µA
Supplier Device Package PG-TO252-3-311
Drain to Source Voltage (Vdss) 60 V
Power Dissipation (Max) 36W (Tc)
Series OptiMOS™
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number IPD220N