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IPD22N08S2L50ATMA1
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IPD22N08S2L50ATMA1

Infineon Technologies

Product No:

IPD22N08S2L50ATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO252-3-11

Datasheet:

-

Description:

MOSFET N-CH 75V 27A TO252-3

Quantity:

Delivery:

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Payment:

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In Stock : 7487

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.880898

    $0.880898

  • 10

    $0.792808

    $7.92808

  • 50

    $0.704718

    $35.2359

  • 100

    $0.616628

    $61.6628

  • 500

    $0.59901

    $299.505

  • 1000

    $0.587265

    $587.265

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 630 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 33 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 50mOhm @ 50A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2V @ 31µA
Supplier Device Package PG-TO252-3-11
Drain to Source Voltage (Vdss) 75 V
Power Dissipation (Max) 75W (Tc)
Series OptiMOS™
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 27A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Package Tape & Reel (TR)
Base Product Number IPD22N08