IPD25CN10NGATMA1
Infineon Technologies
Product No:
IPD25CN10NGATMA1
Manufacturer:
Package:
PG-TO252-3
Datasheet:
-
Description:
MOSFET N-CH 100V 35A TO252-3
Quantity:
Delivery:
Payment:
In Stock : 3189
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$0.691425
$0.691425
10
$0.622283
$6.22283
50
$0.55314
$27.657
100
$0.483998
$48.3998
500
$0.470169
$235.0845
1000
$0.46095
$460.95
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Product Information
Parameter Info
User Guide
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 2070 pF @ 50 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 31 nC @ 10 V |
| Mounting Type | Surface Mount |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 35A, 10V |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 4V @ 39µA |
| Supplier Device Package | PG-TO252-3 |
| Drain to Source Voltage (Vdss) | 100 V |
| Power Dissipation (Max) | 71W (Tc) |
| Series | OptiMOS™ |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
| Mfr | Infineon Technologies |
| Vgs (Max) | ±20V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Package | Tape & Reel (TR) |
| Base Product Number | IPD25CN10 |
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