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IPD30N03S2L20ATMA1
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IPD30N03S2L20ATMA1

Infineon Technologies

Product No:

IPD30N03S2L20ATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO252-3-11

Datasheet:

-

Description:

MOSFET N-CH 30V 30A TO252-31

Quantity:

Delivery:

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Payment:

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In Stock : 147

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.99414

    $0.99414

  • 10

    $0.894726

    $8.94726

  • 50

    $0.795312

    $39.7656

  • 100

    $0.695898

    $69.5898

  • 500

    $0.676015

    $338.0075

  • 1000

    $0.66276

    $662.76

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 530 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 19 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 20mOhm @ 18A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2V @ 23µA
Supplier Device Package PG-TO252-3-11
Drain to Source Voltage (Vdss) 30 V
Power Dissipation (Max) 60W (Tc)
Series OptiMOS™
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number IPD30N03