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IPD30N03S4L14ATMA1
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IPD30N03S4L14ATMA1

Infineon Technologies

Product No:

IPD30N03S4L14ATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO252-3-11

Datasheet:

-

Description:

MOSFET N-CH 30V 30A TO252-3

Quantity:

Delivery:

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Payment:

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In Stock : 13235

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.381528

    $0.381528

  • 10

    $0.333837

    $3.33837

  • 50

    $0.286146

    $14.3073

  • 100

    $0.2623

    $26.23

  • 500

    $0.250378

    $125.189

  • 1000

    $0.238455

    $238.455

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 980 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 14 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 13.6mOhm @ 30A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.2V @ 10µA
Supplier Device Package PG-TO252-3-11
Drain to Source Voltage (Vdss) 30 V
Power Dissipation (Max) 31W (Tc)
Series OptiMOS™
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±16V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number IPD30N03