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IPD30N06S2L23ATMA3
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IPD30N06S2L23ATMA3

Infineon Technologies

Product No:

IPD30N06S2L23ATMA3

Manufacturer:

Infineon Technologies

Package:

PG-TO252-3-11

Datasheet:

-

Description:

MOSFET N-CH 55V 30A TO252-31

Quantity:

Delivery:

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Payment:

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In Stock : 11167

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.73017

    $0.73017

  • 10

    $0.657153

    $6.57153

  • 50

    $0.584136

    $29.2068

  • 100

    $0.511119

    $51.1119

  • 500

    $0.496516

    $248.258

  • 1000

    $0.48678

    $486.78

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1091 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 42 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 23mOhm @ 22A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2V @ 50µA
Supplier Device Package PG-TO252-3-11
Drain to Source Voltage (Vdss) 55 V
Power Dissipation (Max) 100W (Tc)
Series OptiMOS™
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number IPD30N06