Infineon Technologies
Product No:
IPD30N06S4L23ATMA2
Manufacturer:
Package:
PG-TO252-3-11
Datasheet:
-
Description:
MOSFET N-CH 60V 30A TO252-31
Quantity:
Delivery:
Payment:
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$0.51996
$0.51996
10
$0.454965
$4.54965
50
$0.38997
$19.4985
100
$0.357473
$35.7473
500
$0.341224
$170.612
1000
$0.324975
$324.975
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Operating Temperature | -55°C ~ 175°C (TJ) |
FET Feature | - |
Input Capacitance (Ciss) (Max) @ Vds | 1560 pF @ 25 V |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 10 V |
Mounting Type | Surface Mount |
Rds On (Max) @ Id, Vgs | 23mOhm @ 30A, 10V |
Product Status | Active |
Vgs(th) (Max) @ Id | 2.2V @ 10µA |
Supplier Device Package | PG-TO252-3-11 |
Drain to Source Voltage (Vdss) | 60 V |
Power Dissipation (Max) | 36W (Tc) |
Series | Automotive, AEC-Q101, OptiMOS™ |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Technology | MOSFET (Metal Oxide) |
Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
Mfr | Infineon Technologies |
Vgs (Max) | ±16V |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Package | Tape & Reel (TR) |
Base Product Number | IPD30N06 |