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IPD30N12S3L31ATMA1
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IPD30N12S3L31ATMA1

Infineon Technologies

Product No:

IPD30N12S3L31ATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO252-3-11

Datasheet:

-

Description:

MOSFET N-CHANNEL_100+

Quantity:

Delivery:

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In Stock : 1523

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.666382

    $0.666382

  • 10

    $0.599744

    $5.99744

  • 50

    $0.533106

    $26.6553

  • 100

    $0.466468

    $46.6468

  • 500

    $0.45314

    $226.57

  • 1000

    $0.444255

    $444.255

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1970 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 24 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 31mOhm @ 30A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.4V @ 29µA
Supplier Device Package PG-TO252-3-11
Drain to Source Voltage (Vdss) 120 V
Power Dissipation (Max) 57W
Series Automotive, AEC-Q101, OptiMOS®-T
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number IPD30N12