Infineon Technologies
Product No:
IPD50N03S2L06ATMA1
Manufacturer:
Package:
PG-TO252-3-11
Datasheet:
-
Description:
MOSFET N-CH 30V 50A TO252-31
Quantity:
Delivery:
Payment:
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$1.096358
$1.096358
10
$0.986722
$9.86722
50
$0.877086
$43.8543
100
$0.76745
$76.745
500
$0.745523
$372.7615
1000
$0.730905
$730.905
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Operating Temperature | -55°C ~ 175°C (TJ) |
FET Feature | - |
Input Capacitance (Ciss) (Max) @ Vds | 1900 pF @ 25 V |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 68 nC @ 10 V |
Mounting Type | Surface Mount |
Rds On (Max) @ Id, Vgs | 6.4mOhm @ 50A, 10V |
Product Status | Active |
Vgs(th) (Max) @ Id | 2V @ 85µA |
Supplier Device Package | PG-TO252-3-11 |
Drain to Source Voltage (Vdss) | 30 V |
Power Dissipation (Max) | 136W (Tc) |
Series | Automotive, AEC-Q101, OptiMOS™ |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Technology | MOSFET (Metal Oxide) |
Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
Mfr | Infineon Technologies |
Vgs (Max) | ±20V |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Package | Tape & Reel (TR) |
Base Product Number | IPD50 |