Infineon Technologies
Product No:
IPD50N03S4L06ATMA1
Manufacturer:
Package:
PG-TO252-3-11
Datasheet:
-
Description:
MOSFET N-CH 30V 50A TO252-31
Quantity:
Delivery:
Payment:
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$0.488376
$0.488376
10
$0.427329
$4.27329
50
$0.366282
$18.3141
100
$0.335759
$33.5759
500
$0.320497
$160.2485
1000
$0.305235
$305.235
Not the price you want? Send RFQ Now and we'll contact you ASAP.
Operating Temperature | -55°C ~ 175°C (TJ) |
FET Feature | - |
Input Capacitance (Ciss) (Max) @ Vds | 2330 pF @ 25 V |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 31 nC @ 10 V |
Mounting Type | Surface Mount |
Rds On (Max) @ Id, Vgs | 5.5mOhm @ 50A, 10V |
Product Status | Active |
Vgs(th) (Max) @ Id | 2.2V @ 20µA |
Supplier Device Package | PG-TO252-3-11 |
Drain to Source Voltage (Vdss) | 30 V |
Power Dissipation (Max) | 56W (Tc) |
Series | Automotive, AEC-Q101, OptiMOS™ |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Technology | MOSFET (Metal Oxide) |
Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
Mfr | Infineon Technologies |
Vgs (Max) | ±16V |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Package | Tape & Reel (TR) |
Base Product Number | IPD50 |