IPD50N08S413ATMA1
detaildesc

IPD50N08S413ATMA1

Infineon Technologies

Product No:

IPD50N08S413ATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO252-3-313

Datasheet:

-

Description:

MOSFET N-CH 80V 50A TO252-3

Quantity:

Delivery:

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Payment:

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In Stock : 3447

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.668588

    $0.668588

  • 10

    $0.601729

    $6.01729

  • 50

    $0.53487

    $26.7435

  • 100

    $0.468011

    $46.8011

  • 500

    $0.454639

    $227.3195

  • 1000

    $0.445725

    $445.725

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1711 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 30 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 13.2mOhm @ 50A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 33µA
Supplier Device Package PG-TO252-3-313
Drain to Source Voltage (Vdss) 80 V
Power Dissipation (Max) 72W (Tc)
Series Automotive, AEC-Q101, OptiMOS™
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)
Base Product Number IPD50