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IPD50P03P4L11ATMA2
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IPD50P03P4L11ATMA2

Infineon Technologies

Product No:

IPD50P03P4L11ATMA2

Manufacturer:

Infineon Technologies

Package:

PG-TO252-3-11

Datasheet:

-

Description:

MOSFET P-CH 30V 50A TO252-31

Quantity:

Delivery:

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Payment:

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In Stock : 13457

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.660408

    $0.660408

  • 10

    $0.577857

    $5.77857

  • 50

    $0.495306

    $24.7653

  • 100

    $0.454031

    $45.4031

  • 500

    $0.433393

    $216.6965

  • 1000

    $0.412755

    $412.755

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 3770 pF @ 25 V
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 55 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 10.5mOhm @ 50A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2V @ 85µA
Supplier Device Package PG-TO252-3-11
Drain to Source Voltage (Vdss) 30 V
Power Dissipation (Max) 58W (Tc)
Series Automotive, AEC-Q101, OptiMOS®-P2
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 50A (Tc)
Mfr Infineon Technologies
Vgs (Max) +5V, -16V
Package Tape & Reel (TR)
Base Product Number IPD50