IPD50R399CPATMA1
detaildesc

IPD50R399CPATMA1

Infineon Technologies

Product No:

IPD50R399CPATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO252-3-313

Datasheet:

-

Description:

LOW POWER_LEGACY

Quantity:

Delivery:

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Payment:

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In Stock : 1266

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.94059

    $0.94059

  • 10

    $0.846531

    $8.46531

  • 50

    $0.752472

    $37.6236

  • 100

    $0.658413

    $65.8413

  • 500

    $0.639601

    $319.8005

  • 1000

    $0.62706

    $627.06

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 890 pF @ 100 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 23 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 399mOhm @ 4.9A, 10V
Product Status Not For New Designs
Vgs(th) (Max) @ Id 3.5V @ 330µA
Supplier Device Package PG-TO252-3-313
Drain to Source Voltage (Vdss) 500 V
Power Dissipation (Max) 83W (Tc)
Series CoolMOS™ CP
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 9A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)
Base Product Number IPD50R