IPD50R3K0CEAUMA1
detaildesc

IPD50R3K0CEAUMA1

Infineon Technologies

Product No:

IPD50R3K0CEAUMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO252-3

Datasheet:

-

Description:

MOSFET N-CH 500V 1.7A TO252-3

Quantity:

Delivery:

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Payment:

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In Stock : 11767

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.24024

    $0.24024

  • 10

    $0.21021

    $2.1021

  • 50

    $0.18018

    $9.009

  • 100

    $0.165165

    $16.5165

  • 500

    $0.157658

    $78.829

  • 1000

    $0.15015

    $150.15

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 84 pF @ 100 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 4.3 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 3Ohm @ 400mA, 13V
Product Status Active
Vgs(th) (Max) @ Id 3.5V @ 30µA
Supplier Device Package PG-TO252-3
Drain to Source Voltage (Vdss) 500 V
Power Dissipation (Max) 26W (Tc)
Series CoolMOS™ CE
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 1.7A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 13V
Package Tape & Reel (TR)
Base Product Number IPD50R3