IPD60R1K5CEATMA1
detaildesc

IPD60R1K5CEATMA1

Infineon Technologies

Product No:

IPD60R1K5CEATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO252-3

Datasheet:

-

Description:

MOSFET N-CH 600V 3.1A TO252-3

Quantity:

Delivery:

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Payment:

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In Stock : 9

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.870975

    $0.870975

  • 10

    $0.783878

    $7.83878

  • 50

    $0.69678

    $34.839

  • 100

    $0.609683

    $60.9683

  • 500

    $0.592263

    $296.1315

  • 1000

    $0.58065

    $580.65

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Product Information

Parameter Info

User Guide

Operating Temperature -40°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 200 pF @ 100 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 9.4 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 1.5Ohm @ 1.1A, 10V
Product Status Discontinued at Digi-Key
Vgs(th) (Max) @ Id 3.5V @ 90µA
Supplier Device Package PG-TO252-3
Drain to Source Voltage (Vdss) 600 V
Power Dissipation (Max) 28W (Tc)
Series CoolMOS™ CE
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 3.1A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)
Base Product Number IPD60R