IPD60R2K0C6ATMA1
detaildesc

IPD60R2K0C6ATMA1

Infineon Technologies

Product No:

IPD60R2K0C6ATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO252-3

Datasheet:

-

Description:

MOSFET N-CH 600V 2.4A TO252-3

Quantity:

Delivery:

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Payment:

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In Stock : 1428

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.43008

    $0.43008

  • 10

    $0.37632

    $3.7632

  • 50

    $0.32256

    $16.128

  • 100

    $0.29568

    $29.568

  • 500

    $0.28224

    $141.12

  • 1000

    $0.2688

    $268.8

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 140 pF @ 100 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 6.7 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 2Ohm @ 760mA, 10V
Product Status Active
Vgs(th) (Max) @ Id 3.5V @ 60µA
Supplier Device Package PG-TO252-3
Drain to Source Voltage (Vdss) 600 V
Power Dissipation (Max) 22.3W (Tc)
Series CoolMOS™ C6
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 2.4A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)
Base Product Number IPD60R