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IPD65R420CFDAATMA1
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IPD65R420CFDAATMA1

Infineon Technologies

Product No:

IPD65R420CFDAATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO252-3

Datasheet:

-

Description:

MOSFET N-CH 650V 8.7A TO252-3

Quantity:

Delivery:

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In Stock : 1619

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.316228

    $1.316228

  • 10

    $1.184605

    $11.84605

  • 50

    $1.052982

    $52.6491

  • 100

    $0.921359

    $92.1359

  • 500

    $0.895035

    $447.5175

  • 1000

    $0.877485

    $877.485

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Product Information

Parameter Info

User Guide

Operating Temperature -40°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 870 pF @ 100 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 32 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 420mOhm @ 3.4A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4.5V @ 345µA
Supplier Device Package PG-TO252-3
Drain to Source Voltage (Vdss) 650 V
Power Dissipation (Max) 83.3W (Tc)
Series Automotive, AEC-Q101, CoolMOS™
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 8.7A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)
Base Product Number IPD65R420