Infineon Technologies
Product No:
IPD65R950CFDATMA2
Manufacturer:
Package:
PG-TO252-3
Datasheet:
-
Description:
MOSFET N-CH 650V 3.9A TO252-3
Quantity:
Delivery:
Payment:
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$0.673628
$0.673628
10
$0.606265
$6.06265
50
$0.538902
$26.9451
100
$0.471539
$47.1539
500
$0.458067
$229.0335
1000
$0.449085
$449.085
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Operating Temperature | -55°C ~ 150°C (TJ) |
FET Feature | - |
Input Capacitance (Ciss) (Max) @ Vds | 380 pF @ 100 V |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 14.1 nC @ 10 V |
Mounting Type | Surface Mount |
Rds On (Max) @ Id, Vgs | 950mOhm @ 1.5A, 10V |
Product Status | Active |
Vgs(th) (Max) @ Id | 4.5V @ 200µA |
Supplier Device Package | PG-TO252-3 |
Drain to Source Voltage (Vdss) | 650 V |
Power Dissipation (Max) | 36.7W (Tc) |
Series | CoolMOS™ CFD2 |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Technology | MOSFET (Metal Oxide) |
Current - Continuous Drain (Id) @ 25°C | 3.9A (Tc) |
Mfr | Infineon Technologies |
Vgs (Max) | ±20V |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Package | Tape & Reel (TR) |
Base Product Number | IPD65R950 |