IPD70N10S312ATMA1
detaildesc

IPD70N10S312ATMA1

Infineon Technologies

Product No:

IPD70N10S312ATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO252-3-11

Datasheet:

-

Description:

MOSFET N-CH 100V 70A TO252-3

Quantity:

Delivery:

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Payment:

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In Stock : 1610

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.623825

    $1.623825

  • 10

    $1.461442

    $14.61442

  • 50

    $1.29906

    $64.953

  • 100

    $1.136678

    $113.6678

  • 500

    $1.104201

    $552.1005

  • 1000

    $1.08255

    $1082.55

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 4355 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 65 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 11.1mOhm @ 70A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 83µA
Supplier Device Package PG-TO252-3-11
Drain to Source Voltage (Vdss) 100 V
Power Dissipation (Max) 125W (Tc)
Series OptiMOS™
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 70A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)
Base Product Number IPD70