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IPD80P03P4L07ATMA1
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IPD80P03P4L07ATMA1

Infineon Technologies

Product No:

IPD80P03P4L07ATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO252-3-11

Datasheet:

-

Description:

MOSFET P-CH 30V 80A TO252-3

Quantity:

Delivery:

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Payment:

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In Stock : 684

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.787658

    $0.787658

  • 10

    $0.708892

    $7.08892

  • 50

    $0.630126

    $31.5063

  • 100

    $0.55136

    $55.136

  • 500

    $0.535607

    $267.8035

  • 1000

    $0.525105

    $525.105

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 5700 pF @ 25 V
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 80 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 6.8mOhm @ 80A, 10V
Product Status Not For New Designs
Vgs(th) (Max) @ Id 2V @ 130µA
Supplier Device Package PG-TO252-3-11
Drain to Source Voltage (Vdss) 30 V
Power Dissipation (Max) 88W (Tc)
Series OptiMOS™
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Mfr Infineon Technologies
Vgs (Max) +5V, -16V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number IPD80P03