IPD80R1K4P7ATMA1
Infineon Technologies
Product No:
IPD80R1K4P7ATMA1
Manufacturer:
Package:
PG-TO252-2
Datasheet:
-
Description:
MOSFET N-CH 800V 4A TO252
Quantity:
Delivery:
Payment:
In Stock : 2645
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$0.54188
$0.54188
10
$0.474145
$4.74145
50
$0.40641
$20.3205
100
$0.372542
$37.2542
500
$0.355609
$177.8045
1000
$0.338675
$338.675
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Product Information
Parameter Info
User Guide
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 250 pF @ 500 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 10 V |
| Mounting Type | Surface Mount |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 1.4A, 10V |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 3.5V @ 700µA |
| Supplier Device Package | PG-TO252-2 |
| Drain to Source Voltage (Vdss) | 800 V |
| Power Dissipation (Max) | 32W (Tc) |
| Series | CoolMOS™ |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
| Mfr | Infineon Technologies |
| Vgs (Max) | ±20V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Package | Tape & Reel (TR) |
| Base Product Number | IPD80R1 |
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