IPD80R2K4P7ATMA1
detaildesc

IPD80R2K4P7ATMA1

Infineon Technologies

Product No:

IPD80R2K4P7ATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO252-3

Datasheet:

-

Description:

MOSFET N-CH 800V 2.5A TO252-3

Quantity:

Delivery:

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Payment:

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In Stock : 1720

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.484512

    $0.484512

  • 10

    $0.423948

    $4.23948

  • 50

    $0.363384

    $18.1692

  • 100

    $0.333102

    $33.3102

  • 500

    $0.317961

    $158.9805

  • 1000

    $0.30282

    $302.82

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 150 pF @ 500 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 7.5 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 2.4Ohm @ 800mA, 10V
Product Status Active
Vgs(th) (Max) @ Id 3.5V @ 40µA
Supplier Device Package PG-TO252-3
Drain to Source Voltage (Vdss) 800 V
Power Dissipation (Max) 22W (Tc)
Series CoolMOS™ P7
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 2.5A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)
Base Product Number IPD80R2