IPD80R2K8CEATMA1
Infineon Technologies
Product No:
IPD80R2K8CEATMA1
Manufacturer:
Package:
PG-TO252-3
Datasheet:
-
Description:
MOSFET N-CH 800V 1.9A TO252-3
Quantity:
Delivery:
Payment:
In Stock : 3466
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$0.635712
$0.635712
10
$0.556248
$5.56248
50
$0.476784
$23.8392
100
$0.437052
$43.7052
500
$0.417186
$208.593
1000
$0.39732
$397.32
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Product Information
Parameter Info
User Guide
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 290 pF @ 100 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V |
| Mounting Type | Surface Mount |
| Rds On (Max) @ Id, Vgs | 2.8Ohm @ 1.1A, 10V |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 3.9V @ 120µA |
| Supplier Device Package | PG-TO252-3 |
| Drain to Source Voltage (Vdss) | 800 V |
| Power Dissipation (Max) | 42W (Tc) |
| Series | CoolMOS™ CE |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 1.9A (Tc) |
| Mfr | Infineon Technologies |
| Vgs (Max) | ±20V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Package | Tape & Reel (TR) |
| Base Product Number | IPD80R2 |
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