IPD80R4K5P7
Infineon Technologies
Product No:
IPD80R4K5P7
Manufacturer:
Package:
PG-TO252-3-341
Datasheet:
-
Description:
POWER FIELD-EFFECT TRANSISTOR
Quantity:
Delivery:
Payment:
In Stock : 3147
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$0.502857
$0.502857
10
$0.44
$4.4
50
$0.377143
$18.85715
100
$0.345714
$34.5714
500
$0.33
$165
1000
$0.314286
$314.286
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Product Information
Parameter Info
User Guide
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 80 pF @ 500 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 4 nC @ 10 V |
| Mounting Type | Surface Mount |
| Rds On (Max) @ Id, Vgs | 4.5Ohm @ 400mA, 10V |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 3.5V @ 200µA |
| Supplier Device Package | PG-TO252-3-341 |
| Drain to Source Voltage (Vdss) | 800 V |
| Power Dissipation (Max) | 13W (Tc) |
| Series | CoolMOS™ |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 1.5A (Tc) |
| Mfr | Infineon Technologies |
| Vgs (Max) | ±20V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Package | Bulk |
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