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IPD85P04P4L06ATMA2
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IPD85P04P4L06ATMA2

Infineon Technologies

Product No:

IPD85P04P4L06ATMA2

Manufacturer:

Infineon Technologies

Package:

PG-TO252-3-313

Datasheet:

-

Description:

MOSFET P-CH 40V 85A TO252-3

Quantity:

Delivery:

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Payment:

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In Stock : 2152

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.93051

    $0.93051

  • 10

    $0.837459

    $8.37459

  • 50

    $0.744408

    $37.2204

  • 100

    $0.651357

    $65.1357

  • 500

    $0.632747

    $316.3735

  • 1000

    $0.62034

    $620.34

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 6580 pF @ 25 V
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 104 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 6.4mOhm @ 85A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.2V @ 150µA
Supplier Device Package PG-TO252-3-313
Drain to Source Voltage (Vdss) 40 V
Power Dissipation (Max) 88W (Tc)
Series OptiMOS®-P2
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 85A (Tc)
Mfr Infineon Technologies
Vgs (Max) +5V, -16V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number IPD85P04