Infineon Technologies
Product No:
IPD90N03S4L02ATMA1
Manufacturer:
Package:
PG-TO252-3-11
Datasheet:
-
Description:
MOSFET N-CH 30V 90A TO252-3
Quantity:
Delivery:
Payment:
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$1.07352
$1.07352
10
$0.966168
$9.66168
50
$0.858816
$42.9408
100
$0.751464
$75.1464
500
$0.729994
$364.997
1000
$0.71568
$715.68
Not the price you want? Send RFQ Now and we'll contact you ASAP.
Operating Temperature | -55°C ~ 175°C (TJ) |
FET Feature | - |
Input Capacitance (Ciss) (Max) @ Vds | 9750 pF @ 25 V |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 140 nC @ 10 V |
Mounting Type | Surface Mount |
Rds On (Max) @ Id, Vgs | 2.2mOhm @ 90A, 10V |
Product Status | Active |
Vgs(th) (Max) @ Id | 2.2V @ 90µA |
Supplier Device Package | PG-TO252-3-11 |
Drain to Source Voltage (Vdss) | 30 V |
Power Dissipation (Max) | 136W (Tc) |
Series | OptiMOS™ |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Technology | MOSFET (Metal Oxide) |
Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
Mfr | Infineon Technologies |
Vgs (Max) | ±16V |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Package | Tape & Reel (TR) |
Base Product Number | IPD90 |