Infineon Technologies
Product No:
IPD90N06S4L05ATMA2
Manufacturer:
Package:
PG-TO252-3-11
Datasheet:
-
Description:
MOSFET N-CH 60V 90A TO252-31
Quantity:
Delivery:
Payment:
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$0.934447
$0.934447
10
$0.841003
$8.41003
50
$0.747558
$37.3779
100
$0.654113
$65.4113
500
$0.635424
$317.712
1000
$0.622965
$622.965
Not the price you want? Send RFQ Now and we'll contact you ASAP.
Operating Temperature | -55°C ~ 175°C (TJ) |
FET Feature | - |
Input Capacitance (Ciss) (Max) @ Vds | 8180 pF @ 25 V |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
Mounting Type | Surface Mount |
Rds On (Max) @ Id, Vgs | 4.6mOhm @ 90A, 10V |
Product Status | Active |
Vgs(th) (Max) @ Id | 2.2V @ 60µA |
Supplier Device Package | PG-TO252-3-11 |
Drain to Source Voltage (Vdss) | 60 V |
Power Dissipation (Max) | 107W (Tc) |
Series | Automotive, AEC-Q101, OptiMOS™ |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Technology | MOSFET (Metal Oxide) |
Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
Mfr | Infineon Technologies |
Vgs (Max) | ±16V |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Package | Tape & Reel (TR) |
Base Product Number | IPD90 |