Infineon Technologies
Product No:
IPD90N10S4L06ATMA1
Manufacturer:
Package:
PG-TO252-3-313
Datasheet:
-
Description:
MOSFET N-CH 100V 90A TO252-3
Quantity:
Delivery:
Payment:
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$1.323157
$1.323157
10
$1.190842
$11.90842
50
$1.058526
$52.9263
100
$0.92621
$92.621
500
$0.899747
$449.8735
1000
$0.882105
$882.105
Not the price you want? Send RFQ Now and we'll contact you ASAP.
Operating Temperature | -55°C ~ 175°C (TJ) |
FET Feature | - |
Input Capacitance (Ciss) (Max) @ Vds | 6250 pF @ 25 V |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 98 nC @ 10 V |
Mounting Type | Surface Mount |
Rds On (Max) @ Id, Vgs | 6.6mOhm @ 90A, 10V |
Product Status | Active |
Vgs(th) (Max) @ Id | 2.1V @ 90µA |
Supplier Device Package | PG-TO252-3-313 |
Drain to Source Voltage (Vdss) | 100 V |
Power Dissipation (Max) | 136W (Tc) |
Series | Automotive, AEC-Q101, OptiMOS™ |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Technology | MOSFET (Metal Oxide) |
Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
Mfr | Infineon Technologies |
Vgs (Max) | ±16V |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Package | Tape & Reel (TR) |
Base Product Number | IPD90 |