IPD90R1K2C3ATMA2
Infineon Technologies
Product No:
IPD90R1K2C3ATMA2
Manufacturer:
Package:
PG-TO252-3
Datasheet:
-
Description:
MOSFET N-CH 900V 2.1A TO252-3
Quantity:
Delivery:
Payment:
In Stock : 1556
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$0.968153
$0.968153
10
$0.871337
$8.71337
50
$0.774522
$38.7261
100
$0.677707
$67.7707
500
$0.658344
$329.172
1000
$0.645435
$645.435
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Product Information
Parameter Info
User Guide
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 710 pF @ 100 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 3.2 nC @ 10 V |
| Mounting Type | Surface Mount |
| Rds On (Max) @ Id, Vgs | 1.2Ohm @ 2.8A, 10V |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 3.5V @ 310µA |
| Supplier Device Package | PG-TO252-3 |
| Drain to Source Voltage (Vdss) | 900 V |
| Power Dissipation (Max) | 83W (Tc) |
| Series | CoolMOS™ |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 5.1A (Tc) |
| Mfr | Infineon Technologies |
| Vgs (Max) | ±20V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Package | Tape & Reel (TR) |
| Base Product Number | IPD90 |
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