Infineon Technologies
Product No:
IPD95R2K0P7ATMA1
Manufacturer:
Package:
PG-TO252-3
Datasheet:
-
Description:
MOSFET N-CH 950V 4A TO252-3
Quantity:
Delivery:
Payment:
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$0.654097
$0.654097
10
$0.588688
$5.88688
50
$0.523278
$26.1639
100
$0.457868
$45.7868
500
$0.444786
$222.393
1000
$0.436065
$436.065
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Operating Temperature | -55°C ~ 150°C (TJ) |
FET Feature | - |
Input Capacitance (Ciss) (Max) @ Vds | 330 pF @ 400 V |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 10 V |
Mounting Type | Surface Mount |
Rds On (Max) @ Id, Vgs | 2Ohm @ 1.7A, 10V |
Product Status | Active |
Vgs(th) (Max) @ Id | 3.5V @ 80µA |
Supplier Device Package | PG-TO252-3 |
Drain to Source Voltage (Vdss) | 950 V |
Power Dissipation (Max) | 37W (Tc) |
Series | CoolMOS™ P7 |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Technology | MOSFET (Metal Oxide) |
Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
Mfr | Infineon Technologies |
Vgs (Max) | ±20V |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Package | Tape & Reel (TR) |
Base Product Number | IPD95R2 |