IPD95R450PFD7ATMA1

Infineon Technologies

Product No:

IPD95R450PFD7ATMA1

Manufacturer:

Package:

PG-TO252-3

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Description:

MOSFET N-CH 950V 13.3A TO252-3

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	1230 pF @ 400 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	43 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	450mOhm @ 7.2A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3.5V @ 360µA
Supplier Device Package	PG-TO252-3
Drain to Source Voltage (Vdss)	950 V
Power Dissipation (Max)	104W (Tc)
Series	CoolMOS™
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	13.3A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)