IPDD60R080G7XTMA1
detaildesc

IPDD60R080G7XTMA1

Infineon Technologies

Product No:

IPDD60R080G7XTMA1

Manufacturer:

Infineon Technologies

Package:

PG-HDSOP-10-1

Datasheet:

-

Description:

MOSFET N-CH 600V 29A HDSOP-10

Quantity:

Delivery:

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Payment:

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In Stock : 1363

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $4.514265

    $4.514265

  • 10

    $4.062839

    $40.62839

  • 50

    $3.611412

    $180.5706

  • 100

    $3.159986

    $315.9986

  • 500

    $3.0697

    $1534.85

  • 1000

    $3.00951

    $3009.51

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1640 pF @ 400 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 42 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 80mOhm @ 9.7A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 490µA
Supplier Device Package PG-HDSOP-10-1
Drain to Source Voltage (Vdss) 600 V
Power Dissipation (Max) 174W (Tc)
Series CoolMOS™ G7
Package / Case 10-PowerSOP Module
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 29A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)
Base Product Number IPDD60