IPDD60R125G7XTMA1

Infineon Technologies

Product No:

IPDD60R125G7XTMA1

Manufacturer:

Package:

PG-HDSOP-10-1

Datasheet:

Description:

MOSFET N-CH 600V 20A HDSOP-10

Quantity:

Delivery:

Payment:

In Stock : 900

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	1080 pF @ 400 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	27 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	125mOhm @ 6.4A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 320µA
Supplier Device Package	PG-HDSOP-10-1
Drain to Source Voltage (Vdss)	600 V
Power Dissipation (Max)	120W (Tc)
Series	CoolMOS™ G7
Package / Case	10-PowerSOP Module
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	20A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)
Base Product Number	IPDD60