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IPDQ60R022S7AXTMA1
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IPDQ60R022S7AXTMA1

Infineon Technologies

Product No:

IPDQ60R022S7AXTMA1

Manufacturer:

Infineon Technologies

Package:

PG-HDSOP-22-1

Datasheet:

-

Description:

MOSFET

Quantity:

Delivery:

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Payment:

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In Stock : 598

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $9.936045

    $9.936045

  • 10

    $8.942441

    $89.42441

  • 50

    $7.948836

    $397.4418

  • 100

    $6.955232

    $695.5232

  • 500

    $6.756511

    $3378.2555

  • 1000

    $6.62403

    $6624.03

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Product Information

Parameter Info

User Guide

Operating Temperature -40°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 5640 pF @ 300 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 150 nC @ 12 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 22mOhm @ 23A, 12V
Product Status Active
Vgs(th) (Max) @ Id 4.5V @ 1.44mA
Supplier Device Package PG-HDSOP-22-1
Drain to Source Voltage (Vdss) 600 V
Power Dissipation (Max) 416W (Tc)
Series Automotive, AEC-Q101, CoolMOS™
Package / Case 22-PowerBSOP Module
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 24A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 12V
Package Tape & Reel (TR)
Base Product Number IPDQ60R