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IPDQ65R080CFD7XTMA1
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IPDQ65R080CFD7XTMA1

Infineon Technologies

Product No:

IPDQ65R080CFD7XTMA1

Manufacturer:

Infineon Technologies

Package:

PG-HDSOP-22-1

Datasheet:

-

Description:

HIGH POWER_NEW

Quantity:

Delivery:

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Payment:

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In Stock : 388

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $4.062555

    $4.062555

  • 10

    $3.656299

    $36.56299

  • 50

    $3.250044

    $162.5022

  • 100

    $2.843789

    $284.3789

  • 500

    $2.762537

    $1381.2685

  • 1000

    $2.70837

    $2708.37

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 2513 pF @ 400 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 50 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 80mOhm @ 12.5A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4.5V @ 630µA
Supplier Device Package PG-HDSOP-22-1
Drain to Source Voltage (Vdss) 650 V
Power Dissipation (Max) 223W (Tc)
Series CoolMOS™
Package / Case 22-PowerBSOP Module
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 36A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)