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IPDQ65R099CFD7XTMA1
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IPDQ65R099CFD7XTMA1

Infineon Technologies

Product No:

IPDQ65R099CFD7XTMA1

Manufacturer:

Infineon Technologies

Package:

PG-HDSOP-22-1

Datasheet:

-

Description:

HIGH POWER_NEW

Quantity:

Delivery:

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Payment:

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In Stock : 534

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $3.433028

    $3.433028

  • 10

    $3.089725

    $30.89725

  • 50

    $2.746422

    $137.3211

  • 100

    $2.403119

    $240.3119

  • 500

    $2.334459

    $1167.2295

  • 1000

    $2.288685

    $2288.685

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1942 pF @ 400 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 39 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 99mOhm @ 9.7A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4.5V @ 480µA
Supplier Device Package PG-HDSOP-22-1
Drain to Source Voltage (Vdss) 650 V
Power Dissipation (Max) 186W (Tc)
Series CoolMOS™
Package / Case 22-PowerBSOP Module
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 29A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tape & Reel (TR)
Base Product Number IPDQ65