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IPF039N08NF2SATMA1
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IPF039N08NF2SATMA1

Infineon Technologies

Product No:

IPF039N08NF2SATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO263-7-14

Datasheet:

-

Description:

TRENCH 40<-<100V PG-TO263-7

Quantity:

Delivery:

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Payment:

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In Stock : 416

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $2.000408

    $2.000408

  • 10

    $1.800367

    $18.00367

  • 50

    $1.600326

    $80.0163

  • 100

    $1.400285

    $140.0285

  • 500

    $1.360277

    $680.1385

  • 1000

    $1.333605

    $1333.605

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 3800 pF @ 40 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 81 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 3.9mOhm @ 80A, 10V
Product Status Active
Vgs(th) (Max) @ Id 3.8V @ 85µA
Supplier Device Package PG-TO263-7-14
Drain to Source Voltage (Vdss) 80 V
Power Dissipation (Max) 150W (Tc)
Series StrongIRFET™ 2
Package / Case TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 126A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Package Tape & Reel (TR)
Base Product Number IPF039N