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IPF050N10NF2SATMA1
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IPF050N10NF2SATMA1

Infineon Technologies

Product No:

IPF050N10NF2SATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TO263-7

Datasheet:

-

Description:

MOSFET

Quantity:

Delivery:

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Payment:

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In Stock : 1158

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.385212

    $1.385212

  • 10

    $1.246691

    $12.46691

  • 50

    $1.10817

    $55.4085

  • 100

    $0.969649

    $96.9649

  • 500

    $0.941944

    $470.972

  • 1000

    $0.923475

    $923.475

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 3600 pF @ 50 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 76 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 5.05mOhm @ 60A, 10V
Product Status Active
Vgs(th) (Max) @ Id 3.8V @ 84µA
Supplier Device Package PG-TO263-7
Drain to Source Voltage (Vdss) 100 V
Power Dissipation (Max) 3.8W (Ta), 150W (Tc)
Series StrongIRFET™ 2
Package / Case TO-263-7, D²Pak (6 Leads + Tab)
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 19A (Ta), 117A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Package Tape & Reel (TR)