Home / FET, MOSFET Arrays / IPG20N04S4L11ATMA1
IPG20N04S4L11ATMA1
detaildesc

IPG20N04S4L11ATMA1

Infineon Technologies

Product No:

IPG20N04S4L11ATMA1

Manufacturer:

Infineon Technologies

Package:

PG-TDSON-8-4

Datasheet:

-

Description:

MOSFET 2N-CH 40V 20A 8TDSON

Quantity:

Delivery:

1.webp 4.webp 5.webp 2.webp 3.webp

Payment:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

In Stock : 29483

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.658056

    $0.658056

  • 10

    $0.575799

    $5.75799

  • 50

    $0.493542

    $24.6771

  • 100

    $0.452414

    $45.2414

  • 500

    $0.431849

    $215.9245

  • 1000

    $0.411285

    $411.285

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature Logic Level Gate
Configuration 2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds 1990pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 26nC @ 10V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 11.6mOhm @ 17A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.2V @ 15µA
Supplier Device Package PG-TDSON-8-4
Drain to Source Voltage (Vdss) 40V
Series Automotive, AEC-Q101, OptiMOS™
Package / Case 8-PowerVDFN
Technology MOSFET (Metal Oxide)
Power - Max 41W
Current - Continuous Drain (Id) @ 25°C 20A
Mfr Infineon Technologies
Package Tape & Reel (TR)
Base Product Number IPG20N