IPI023NE7N3G
Infineon Technologies
Product No:
IPI023NE7N3G
Manufacturer:
Package:
PG-TO262-3
Datasheet:
-
Description:
N-CHANNEL POWER MOSFET
Quantity:
Delivery:
Payment:
In Stock : 3588
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$3.591
$3.591
10
$3.2319
$32.319
50
$2.8728
$143.64
100
$2.5137
$251.37
500
$2.44188
$1220.94
1000
$2.394
$2394
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Product Information
Parameter Info
User Guide
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 14400 pF @ 37.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 206 nC @ 10 V |
| Mounting Type | Through Hole |
| Rds On (Max) @ Id, Vgs | 2.3mOhm @ 100A, 10V |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 3.8V @ 273µA |
| Supplier Device Package | PG-TO262-3 |
| Drain to Source Voltage (Vdss) | 75 V |
| Power Dissipation (Max) | 300W (Tc) |
| Series | OptiMOS™ |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Mfr | Infineon Technologies |
| Package | Bulk |
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