IPI029N06NAKSA1
detaildesc

IPI029N06NAKSA1

Infineon Technologies

Product No:

IPI029N06NAKSA1

Manufacturer:

Infineon Technologies

Package:

PG-TO262-3

Datasheet:

-

Description:

MOSFET N-CH 60V 24A/100A TO262-3

Quantity:

Delivery:

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Payment:

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In Stock : 19

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.449788

    $1.449788

  • 10

    $1.304809

    $13.04809

  • 50

    $1.15983

    $57.9915

  • 100

    $1.014851

    $101.4851

  • 500

    $0.985856

    $492.928

  • 1000

    $0.966525

    $966.525

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 4100 pF @ 30 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 56 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 2.9mOhm @ 100A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.8V @ 75µA
Supplier Device Package PG-TO262-3
Drain to Source Voltage (Vdss) 60 V
Power Dissipation (Max) 3W (Ta), 136W (Tc)
Series OptiMOS™
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 24A (Ta), 100A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Package Tube
Base Product Number IPI029