Infineon Technologies
Product No:
IPI029N06NAKSA1
Manufacturer:
Package:
PG-TO262-3
Datasheet:
-
Description:
MOSFET N-CH 60V 24A/100A TO262-3
Quantity:
Delivery:
Payment:
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$1.449788
$1.449788
10
$1.304809
$13.04809
50
$1.15983
$57.9915
100
$1.014851
$101.4851
500
$0.985856
$492.928
1000
$0.966525
$966.525
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Operating Temperature | -55°C ~ 175°C (TJ) |
FET Feature | - |
Input Capacitance (Ciss) (Max) @ Vds | 4100 pF @ 30 V |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 56 nC @ 10 V |
Mounting Type | Through Hole |
Rds On (Max) @ Id, Vgs | 2.9mOhm @ 100A, 10V |
Product Status | Active |
Vgs(th) (Max) @ Id | 2.8V @ 75µA |
Supplier Device Package | PG-TO262-3 |
Drain to Source Voltage (Vdss) | 60 V |
Power Dissipation (Max) | 3W (Ta), 136W (Tc) |
Series | OptiMOS™ |
Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
Technology | MOSFET (Metal Oxide) |
Current - Continuous Drain (Id) @ 25°C | 24A (Ta), 100A (Tc) |
Mfr | Infineon Technologies |
Vgs (Max) | ±20V |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
Package | Tube |
Base Product Number | IPI029 |