IPI041N12N3GAKSA1

Infineon Technologies

Product No:

IPI041N12N3GAKSA1

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Package:

PG-TO262-3

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Description:

MOSFET N-CH 120V 120A TO262-3

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	13800 pF @ 60 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	211 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	4.1mOhm @ 100A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 270µA
Supplier Device Package	PG-TO262-3
Drain to Source Voltage (Vdss)	120 V
Power Dissipation (Max)	300W (Tc)
Series	OptiMOS™
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	120A (Tc)
Mfr	Infineon Technologies
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	IPI041