IPI072N10N3 G
Infineon Technologies
Product No:
IPI072N10N3 G
Manufacturer:
Package:
PG-TO262-3-1
Datasheet:
-
Description:
N-CHANNEL POWER MOSFET
Quantity:
Delivery:
Payment:
In Stock : 505
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$2.34675
$2.34675
10
$2.112075
$21.12075
50
$1.8774
$93.87
100
$1.642725
$164.2725
500
$1.59579
$797.895
1000
$1.5645
$1564.5
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Product Information
Parameter Info
User Guide
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 4910 pF @ 50 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 68 nC @ 10 V |
| Mounting Type | Through Hole |
| Rds On (Max) @ Id, Vgs | 7.2mOhm @ 80A, 10V |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 3.5V @ 90µA |
| Supplier Device Package | PG-TO262-3-1 |
| Drain to Source Voltage (Vdss) | 100 V |
| Power Dissipation (Max) | 150W (Tc) |
| Series | OptiMOS® 3 |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
| Mfr | Infineon Technologies |
| Vgs (Max) | ±20V |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Package | Bulk |
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