IPI100N06S3L04XK
detaildesc

IPI100N06S3L04XK

Infineon Technologies

Product No:

IPI100N06S3L04XK

Manufacturer:

Infineon Technologies

Package:

PG-TO262-3

Datasheet:

pdf

Description:

MOSFET N-CH 55V 100A TO262-3

Quantity:

Delivery:

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Payment:

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In Stock : 59

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.50129

    $1.50129

  • 10

    $1.351161

    $13.51161

  • 50

    $1.201032

    $60.0516

  • 100

    $1.050903

    $105.0903

  • 500

    $1.020877

    $510.4385

  • 1000

    $1.00086

    $1000.86

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 175°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 17270 pF @ 25 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 362 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 3.8mOhm @ 80A, 10V
Product Status Obsolete
Vgs(th) (Max) @ Id 2.2V @ 150µA
Supplier Device Package PG-TO262-3
Drain to Source Voltage (Vdss) 55 V
Power Dissipation (Max) 214W (Tc)
Series OptiMOS™
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Mfr Infineon Technologies
Vgs (Max) ±16V
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Package Tube
Base Product Number IPI100N